Design and Simulation of GaN Superjunction Transistors with 2DEG Channels and Fin Channels
IEEE Journal of Emerging and Selected Topics in Power Electronics, pp. 1-1, 2019.
High-performance 2-D-electron-gas (2-DEG) channel and submicron fin-shaped channel have recently been demonstrated in vertical GaN power transistors. This indicates that, unlike Si and SiC, the inversion-type metal–oxide–semiconductor channel is no longer the “default option” for future GaN superjunction transistors. This paper demonstrat...More
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