Design and Simulation of GaN Superjunction Transistors with 2DEG Channels and Fin Channels

Ming Xiao
Ming Xiao
Ruizhe Zhang
Ruizhe Zhang
Dong Dong
Dong Dong

IEEE Journal of Emerging and Selected Topics in Power Electronics, pp. 1-1, 2019.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.1109/jestpe.2019.2912978
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Other Links: academic.microsoft.com

Abstract:

High-performance 2-D-electron-gas (2-DEG) channel and submicron fin-shaped channel have recently been demonstrated in vertical GaN power transistors. This indicates that, unlike Si and SiC, the inversion-type metal–oxide–semiconductor channel is no longer the “default option” for future GaN superjunction transistors. This paper demonstrat...More

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