Optimization of DC-DC Power Converter Design with Second Generation HiSIM_HV Model

2019 2nd International Symposium on Devices, Circuits and Systems (ISDCS)(2019)

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摘要
This work presents power MOSFET optimization strategy with second generation HiSIM_HV to design a DC-DC converter circuit as a highly efficient switch. A DC-DC power converter circuit optimization is performed by minimizing the values of the circuit elements, such as inductor, capacitor and resistor for very high frequency switching application. Switching losses and non-linearity of ON-resistance are taken care of to improve the efficiency of the switch at high frequency. We also performed DC and AC analyses of HiSIM_HV MOSFET with for BUCK converter circuit design. This optimization technique can be applicable to other DC-DC converters.
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关键词
MOSFET,Logic gates,Switches,Capacitance,Buck converters,Semiconductor device modeling,Switching loss
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