Improving BSIM Flicker Noise Model
2019 Electron Devices Technology and Manufacturing Conference (EDTM)(2019)
摘要
We modified BSIM flicker noise model and extracted the noise parameters as a function of gate bias. In the proposed model, three noise parameters (NOIA, NOIB and NOIC) were found to be proportional to the oxide trap density. The measured flicker noise of the MOSFET is compared with the existing model and the proposed model, and it is confirmed that the proposed model has higher accuracy.
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关键词
Logic gates,Data models,1f noise,Mathematical model,Semiconductor device modeling,Density measurement,Voltage measurement
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