Realization and Performance Analysis of Facile-Processed $\mu$ -IDE-Based Multilayer HfS₂/HfO₂ Transistors

A new and interesting field-effect transistor (FET) structure based on multilayer HfS ₂ as a channel material, integrated with Al $\mu $ -interdigitated electrodes ( $\mu $ -IDEs) and HfO ₂ as a gate dielectric is reported for the first time. The electrical performance of Al/HfO ₂ /HfS ₂ /Al $_{\boldsymbol {\mu -\mathrm {IDE}}}$ -based FETs exhibited the threshold voltage of ~−2.72 V, generous subthreshold swing (SS) of ~70 mV/dec, substantial ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{{ \mathrm{\scriptscriptstyle OFF}}}$ ratio of ~10 ⁴ , transconductance of $\sim 1.5~\mu \text{S}$ , a significantly high electron mobility of ~56.7cm ² /Vs at $\text{V}_{ds} = {1}$ V, and low gate leakage current of ~47 nA/cm ² at $\text{V}_{{\text {gs}}} = -{1}$ V. Therefore, moderate threshold voltage, generous SS, robust current saturation, ultralow off-state leakage current, and low operating voltage of the fabricated Al/HfO ₂ /HfS ₂ /Al $_{\boldsymbol {\mu -\mathrm {IDE}}}$ , FETs show its potential for next-generation (NG) low-power FET applications.