Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)(2019)
摘要
Defects at (sub)surface of dielectric layers as bonding surface are investigated by using positron annihilation spectroscopy. The defect inspection technique unveils the behavior of open spaces in SiCN in each process step. The bonding mechanisms of SiCN-SiCN is discussed with dangling bonds and open spaces obtained by positron annihilation spectroscopy.
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关键词
Bonding,Positrons,Plasmas,Spectroscopy,Dielectrics,Scattering parameters,Surface treatment
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