Single-crystalline Te-hyperdoped Silicon Via Controlling the Velocity of Ultra-Fast Cooling During Femtosecond-Laser Irradiation
Conference on Lasers and Electro-Optics(2019)
摘要
We implement single-crystalline tellurium (Te)-hyperdoped silicon via controlling the velocity of ultra-fast cooling during femtosecond-laser irradiation, providing a new path of less defective semiconductor hyperdoping, has great potential in applications of low noise semiconductor devices. © 2019 The Author(s)
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关键词
femtosecond-laser irradiation,single-crystalline tellurium-hyperdoped silicon,defective semiconductor hyperdoping,ultrafast cooling velocity,low noise semiconductor devices,Si:Te
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