Improved electrical performance of multilayer MoS2 transistor by incorporating Al into host HfO2 as gate dielectric
APPLIED PHYSICS EXPRESS(2019)
摘要
The effects of incorporating Al into HfO2 as gate dielectric on the back-gated MoS2 transistor are investigated. Hf0.5Al0.5O as gate dielectric exhibits excellent electrical characteristics: on/off ratio of 1.8 x 10(7), carrier mobility of 49.3 cm(2)/(V . s), subthreshold swing of 118 mV dec(-1), interface-state density of 2.3 x 10(12) eV(-1) cm(-2), due to the Al incorporation into the Hf0 2 can passivate the defective states induced by oxygen vacancies and improve the dielectric densification and uniformity to obtain an excellent MoS2/Hf1-xAlxO interface. Besides, the intrinsic carrier mobility of 100 cm(2 )V(-1) s(-1) and contact resistance of 11.1 k Omega/mu m indicates that the contact resistance is a main factor limiting the mobility. (C) 2019 The Japan Society of Applied Physics
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