Optoelectronic Valley-Locked Spin Photocurrent Generation Using Wse2-Bi2se3 Heterostructure

Minji Noh,Soonyoung Cha,Jehyun Kim, Yoomin Kim,Jekwan Lee,Hoil Kim,Seunghoon Yang,Sooun Lee,Wooyoung Shim,Chul-Ho Lee,Jun Sung Kim,Dohun Kim,Hyunyong Choi

2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)（2019）

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摘要

We demonstrate a new optoelectronic platform using WSe2-Bi2Se3 heterostructures to generate and detect the valley-coupled spin-polarized photocurrents at room temperature. The light polarization and the external electric field can manipulate the magnitude of the current. (C) 2019 The Author(s)

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关键词

light polarization,optoelectronic valley-locked spin photocurrent generation,optoelectronic platform,valley-coupled spin-polarized photocurrents,external electric field,heterostructures,temperature 293.0 K to 298.0 K,WSe2-Bi2Se3

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