Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire
APL MATERIALS(2019)
摘要
Epitaxial layers of -Ga2O3 with different Sn doping levels were grown by halide vapor phase epitaxy on sapphire. The films had shallow donor concentrations ranging from 10(17) to 4.8 x 10(19) cm(-3). Deep level transient spectroscopy of the lowest doped samples revealed dominant A traps with level E-c - 0.6 eV and B traps near E-c - 1.1 eV. With increasing shallow donor concentration, the density of the A traps increased, and new traps C (E-c - 0.85 eV) and D (E-c - 0.23 eV) emerged. Photocapacitance spectra showed the presence of deep traps with optical ionization energy of approximate to 2 and 2.7 eV and prominent persistent photocapacitance at low temperature, surviving heating to temperatures above room temperature. The diffusion length of nonequilibrium charge carriers was 0.15 mu m, and microcathodoluminescence spectra showed peaks in the range 339-540 nm, but no band-edge emission.
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