Enhanced Photo Response At Two-Micron-Wavelength Using Gesn/Ge Multiple-Quantum-Well Waveguide

2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)(2019)

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摘要
GeSn multiple-quantum-well rib waveguide on Si substrate was fabricated with vertical p-i-n photodiode structure and was characterized at two-micron-wavelength. Enhanced external photo response was achieved as compared to surface-illuminated counterparts, thanks to the waveguide scheme. (c) 2019 The Author(s)
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关键词
gesn/ge,waveguide,two-micron-wavelength,multiple-quantum-well
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