Characterization of pseudomorphic γ-Ga2O3 and γ-Al2O3 films on MgAl2O4 substrates and the band-alignment at the coherent γ-Ga2O3/Al2O3 heterojunction interface

Yuji Kato
Yuji Kato
Eiichi Kobayashi
Eiichi Kobayashi

JAPANESE JOURNAL OF APPLIED PHYSICS, pp. 0609102019.

Cited by: 0|Views1

Abstract:

We characterized 3.0 nm gamma-Ga2O3, 3.0 nm gamma-Al2O3, and 1.0/3.0 nm gamma-Ga2O3/Al2O3 films grown on (100) MgAl2O4 substrates. X-ray diffraction measurements revealed that gamma-Ga2O3 and gamma-Al2O3 films were coherent to the substrate with Poisson's ratios of 0.31 and 0.28. While, X-ray photoelectron spectroscopy found that band gap...More

Code:

Data:

Get fulltext within 24h
Bibtex
Upload PDF

1.Your uploaded documents will be check within 24h, and coins will be credited to your account.

2.As the current system does not support cash withdrawal, you can add staff WeChat (AMxiaomai) to receive it as a red packet.

3.10 coins will be exchanged for 1 yuan.

?

Upload a single paper

for 5 coins

Wechat's Red Packet
?

Upload 50 articles

for 250 coins

Wechat's Red Packet
?

Upload 200 articles

for 1000 coins

Wechat's Red Packet
?

Upload 500 articles

for 2500 coins

Wechat's Red Packet
?

Upload 1000 articles

for 5000 coins

Wechat's Red Packet
Your rating :
0

 

Tags
Comments