Characterization of pseudomorphic γ-Ga2O3 and γ-Al2O3 films on MgAl2O4 substrates and the band-alignment at the coherent γ-Ga2O3/Al2O3 heterojunction interface
JAPANESE JOURNAL OF APPLIED PHYSICS, pp. 0609102019.
Abstract:
We characterized 3.0 nm gamma-Ga2O3, 3.0 nm gamma-Al2O3, and 1.0/3.0 nm gamma-Ga2O3/Al2O3 films grown on (100) MgAl2O4 substrates. X-ray diffraction measurements revealed that gamma-Ga2O3 and gamma-Al2O3 films were coherent to the substrate with Poisson's ratios of 0.31 and 0.28. While, X-ray photoelectron spectroscopy found that band gap...More
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