Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019.
For accelerating the development of GaN power-switching devices, current knowledge on the origins and dynamic properties of the major intrinsic nonradiative recombination centers (NRCs) in Mg-doped GaN (GaN: Mg) are reviewed, as lightly to heavily doped p-type planar GaN segments are required but certain compensating defects including NRC...More
Full Text (Upload PDF)
PPT (Upload PPT)