Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures

JAPANESE JOURNAL OF APPLIED PHYSICS, 2019.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.7567/1347-4065/ab0d06
Other Links: academic.microsoft.com

Abstract:

For accelerating the development of GaN power-switching devices, current knowledge on the origins and dynamic properties of the major intrinsic nonradiative recombination centers (NRCs) in Mg-doped GaN (GaN: Mg) are reviewed, as lightly to heavily doped p-type planar GaN segments are required but certain compensating defects including NRC...More

Code:

Data:

Your rating :
0

 

Tags
Comments