Design guidelines for edge-coupled waveguide unitraveling carrier photodiodes with improved bandwidth

IET Optoelectronics(2019)

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摘要
This study presents experimental and simulation results for edge-coupled waveguide unitravelling-carrier (UTC) photodiodes based on an InGaAs/InP heterostructure. Experimental results are used to calibrate the numerical device simulator. The authors study how different aspects of the UTC photodiode epistructure and contacts impact on the overall device bandwidth, calculating the photoresponse for ...
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关键词
gallium arsenide,III-V semiconductors,indium compounds,integrated optoelectronics,photodiodes
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