Control of Microstructural Phase Distribution in Ge 2 Sb 2 Te 5 Phase Change Memory Cells

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, pp. 19001962019.

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Abstract:

Recently, phase change memory is one of highly developed memory products; however, further research is needed to manage intrinsic variations in switching voltage and resistance drift, which is crucial for high density memory development. Current-voltage characteristics, their temperature dependence, and voltage-dependent resistance switch...More

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