ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance
IEEE Electron Device Letters, pp. 1056-1059, 2019.
We report the dc and RF performance of ScAlN/GaN high-electron-mobility transistors (HEMTs). The ScAlN/GaN material was epitaxially grown onto a GaN template on a 4-in 4H-SiC substrate by molecular beam epitaxy. The sheet resistance was measured to be 236 ± 4 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="htt...More
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