ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

Andrew J. Green
Andrew J. Green
Robert C. Fitch
Robert C. Fitch
Miles Lindquist
Miles Lindquist
Dan Brooks
Dan Brooks
Andy Xie
Andy Xie

IEEE Electron Device Letters, pp. 1056-1059, 2019.

Cited by: 0|Bibtex|Views11|DOI:https://doi.org/10.1109/LED.2019.2915555
EI WOS

Abstract:

We report the dc and RF performance of ScAlN/GaN high-electron-mobility transistors (HEMTs). The ScAlN/GaN material was epitaxially grown onto a GaN template on a 4-in 4H-SiC substrate by molecular beam epitaxy. The sheet resistance was measured to be 236 ± 4 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="htt...More

Code:

Data:

Your rating :
0

 

Tags
Comments