Computational study of positron annihilation parameters for cation mono-vacancies and vacancy complexes in nitride semiconductor alloys

Journal of physics. Condensed matter : an Institute of Physics journal, pp. 4754012019.

Cited by: 0|Bibtex|Views2|DOI:https://doi.org/10.1088/1361-648X/ab35a4
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Abstract:

We calculate positron annihilation parameters, namely the S and W parameters from the Doppler broadening spectroscopy and the positron lifetime [Formula: see text], for defect-free states as well as cation mono-vacancies and vacancy complexes in nitride semiconductor alloys AlGaN, InGaN and AlInN. The obtained distributions of these param...More

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