Computational study of positron annihilation parameters for cation mono-vacancies and vacancy complexes in nitride semiconductor alloys

We calculate positron annihilation parameters, namely the S and W parameters from the Doppler broadening spectroscopy and the positron lifetime [Formula: see text], for defect-free states as well as cation mono-vacancies and vacancy complexes in nitride semiconductor alloys AlGaN, InGaN and AlInN. The obtained distributions of these param...More