Comparison of Extremely High-Temperature Characteristics of Planar and Three- Dimensional SiC MOSFETs

We demonstrated differences in the characteristics of planar and three-dimensional SiC MOSFETs at extremely high temperatures (around 500°C). There is a large threshold-voltage shift ( $\Delta {V} _{\mathbf {th}}$ ) from 25 to 500°C in the SiC MOSFETs. The $\Delta {V} _{\mathbf {th}}$ of the three-dimensional SiC MOSFET is half that of the planar SiC MOSFET. A large amount of electron emissions from shallow interface traps causes the $\Delta {V} _{\mathbf {th}}$ and is likely to affect the robustness of SiC MOSFETs against short circuits.