Gallium Oxide Nanowire with Twinning Structure and Its Photoluminescence Property.

In this paper, beta-Ga2O3 nanowires were synthesized by vapor transport method at different temperatures. The as-prepared samples were analyzed for crystal structure by X-ray diffraction (XRD), transmission electron microscopy (TEM) and selected area electron diffraction (SAED), and for morphology using scanning electron microscopy (SEM). The results show that the Ga2O3 nanowires present a monoclinic structure, the length and diameter of the Ga2O3 nanowires increased with the growth temperature. A majority of the Ga2O3 nanowires present longitudinal twinning structures. A broad photoluminescence emission band was observed from the Ga2O3 nanowires at room temperature, which is caused by different kinds of vacancy defects. Our study shows an unusual twinning structure of beta-Ga2O3 nanowires, which may be helpful to understand the growth mechanism of nanowires.