Study of a SiO 2 /Si Structure Implanted with 64 Zn + and 16 O + Ions and Heat Treated in a Neutral Inert Environment
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques(2019)
摘要
The surface layer of a SiO 2 /Si structure implanted with Zn + and O + ions and annealed in neutral and inert atmospheres is studied. At first, n -Si(100) silicon plates are oxidized in dry O 2 to achieve an oxide-film thickness of 0.2 μm. Then, at room temperature, they are sequentially implanted with a dose of 5 × 10 16 cm –2 of 70-keV 64 Zn + ions and with a dose of 6.1 × 10 16 cm –2 of 40-keV ^16O_2^ + ions. Plate overheating, compared with room temperature, does not exceed 70°C. The samples are isochronously annealed for 1 h in N 2 at a temperature from 400 to 600°C and then in Ar in the range of 700–1000°C with a step of 100°C. After implantation, the crystalline phase Zn(102) is found to form in the SiO 2 film. After annealing at 700°C, Zn is oxidized to form the ZnO phase. Analysis of the diffraction patterns shows the β-Zn 2 SiO 4 and Zn 1.95 SiO 4 phases to be additionally formed in the samples after annealing at 800°C. After annealing at 900°C and above, the ZnO phase was not detected in the samples.
更多查看译文
关键词
SiO2 film, Zn/O ion implantation, ZnO nanoparticles, Rutherford backscattering spectroscopy, X-ray fluorescence spectroscopy, photoluminescence, X-ray diffraction
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络