Landau Levels Of Bilayer Graphene In A Wse2/Bilayer Graphene Van Der Waals Heterostructure

Heterostructures formed between two different van der Waals materials enable interactions and functionalities absent in each component. In this work we show that vicinity to an atomically thin WSe2 sheet dramatically impacts the energies of the symmetry-broken low Landau levels of bilayer graphene, possibly due to Coulomb screening. We present a systematic study of the magnetic field and electrical displacement field dependences of the Landau level gaps at filling factor nu = 1, 2, 3, and compare to boron nitride encapsulated pristine bilayer graphene. The exchange-dominated energy splitting between the N = 0 and 1 orbital wave functions is significantly enhanced, which leads to a modified phase diagram at filling factor nu = 0 and larger energy gaps at nu = 1 and 3 in WSe2/bilayer graphene heterostructures. The exchange-enhanced spin gap at nu = 2, on the other hand, is reduced by approximately twofold. Our results demonstrate a possible way to engineer quantum Hall phenomena via van der Waals heterostructures.