First Demonstration of Complementary FinFETs and Tunneling FinFETs Co-Integrated on a 200 mm GeSnOI Substrate: A Pathway towards Future Hybrid Nano-electronics Systems
2019 Symposium on VLSI Technology(2019)
摘要
For the first time, complementary FinFETs and complementary tunneling FinFETs (TFFETs), with fin width (WFin) of 20 nm and fin height (Hfin) of 50 nm, were co-integrated on the same substrate, enabled by the formation of high-quality GeSn-on-insulator (GeSnOI) substrate with 200 mm wafer size. Decent electrical characteristics were realized for both GeSn n-and p-channel FinFETs and TFFETs. We also performed simulation studies to show the promise of the GeSnOI platform, which is not only able to suppress the off-state leakage current and improve the Ion/Ioff ratio of tunneling FETs, but can also provide the powerful flexibility of using a back bias to achieve superior electrical characteristics beyond the benefits of incorporating Sn into Ge.
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关键词
tunneling FinFETs co-integrated on GeSnOI substrate,hybrid nanoelectronics systems,TFFET,GeSn-on-insulator,GeSnOI platform,complementary tunneling FinFETs,GeSn
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