Evidence of filamentary switching and relaxation mechanisms in Gex Se1-x OTS selectors
2019 Symposium on VLSI Technology(2019)
摘要
Comprehensive experimental and simulation evidence of the filamentary-type switching and V
th
relaxation mechanism associated with defect charging/discharging in Ge
x
Se
1-x
ovonic threshold switching (OTS) selector is reported. For the first time, area independence of conduction current at both on/off states, Weibull distribution of time-to-switch-on/off (t-on/off), Vth relaxation and its dependence on time, bias and temperature, which is in good agreement with our first-principles simulations in density functional theory, provide strong support for filament modulation by defect delocalzation/localization that is responsible for volatile switching.
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关键词
first-principles simulations,volatile switching,relaxation mechanisms,filamentary-type switching,relaxation mechanism,Weibull distribution,OTS selectors,ovonic threshold,density functional theory
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