Influence Of Annealing On The Electrical Characteristic Of Gasbbi Schottky Diodes

The influence of postgrowth thermal annealing on GaSbBi Schottky barrier diodes has been investigated. The effects of the annealing temperature and time on the material quality and electrical characteristics of the diodes have been studied. The I-V characteristics indicated a better ideality factor and less leakage current at the reverse bias, as the annealing temperature increased up to 500 degrees C for a duration of 30min. X-ray diffraction and scanning transmission electron microscope measurements were performed to verify that the bismuth composition was unaffected during the annealing process. Energy dispersive x-ray analysis indicated that Sb clustering occurs at high annealing temperatures, resulting in a concomitant degradation in the electrical performance. The optimum electrical characteristics of the diode were obtained with an annealing temperature of 500 degrees C for 30min, resulting in an ideality factor of 1.3 being achieved.