Corrections to: Lateral current spreading in III-N ultraviolet vertical-cavity surface-emitting lasers using modulation-doped short period superlattices (IEEE Journal of Quantum Electronics (2018) 54: 4 (2400507) DOI: 10.1109/JQE.2018.2836667)

IEEE Journal of Quantum Electronics(2019)

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摘要
There is an error in Fig. 4 of [1] in the TE01 optical mode profile. The error is due to the author forgetting to rescale the x-axis when plotting the optical mode profile on the right y-axis. This oversight occurred because the optical mesh is different from the electrical mesh, and the correct figure is shown below. We wish to emphasize that this was merely a plotting error, and hence all of the...
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关键词
Vertical cavity surface emitting lasers,Semiconductor device modeling,Gallium nitride
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