Realization Of Quantum Hall Effect In Chemically Synthesized Inse
ADVANCED FUNCTIONAL MATERIALS(2019)
摘要
Recently, 2D electron gases have been observed in atomically thin semiconducting crystals, enabling the observation of rich physical phenomena at the quantum level within the ultimate thickness limit. However, the observation of 2D electron gases and subsequent quantum Hall effect require exceptionally high crystalline quality, rendering mechanical exfoliation as the only method to produce high-quality 2D semiconductors of black phosphorus and indium selenide (InSe), which hinder large-scale device applications. Here, the controlled one-step synthesis of high-quality 2D InSe thin films via chemical vapor transport method is reported. The carrier Hall mobility of hexagonal boron nitride (hBN) encapsulated InSe flakes can be up to 5000 cm(2) V-1 s(-1) at 1.5 K, enabling to observe the quantum Hall effect in a synthesized van der Waals semiconductor. The existence of the quantum Hall effect in directly synthesized 2D semiconductors indicates a high quality of the chemically synthesized 2D semiconductors, which hold promise in quantum devices and applications with high mobility.
更多查看译文
关键词
2D semiconductor, chemical vapor transport, indium selenide, quantum Hall effect
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络