Resistance Scaling of Cu Interconnect and Alternate Metal (Co, Ru) Benchmark toward sub 10nm Dimension

Interconnect line resistance at smaller dimension is a critical scaling roadblock. While efforts continue to manage resistance of Cu interconnect, Cu replacements such as Co, Ru are under active consideration as next generation interconnects. It is important to characterize how these metals scale with respect to each other to provide input into the technology roadmap. Here, we present our work on resistance benchmarking of Cu, Co and Ru interconnects down to < 10nm CD to help shed light from a scaling perspective.