Stochastic Filament Formation on the Cycling Endurance of Backfilled Contact Resistive Random Access Memory Cells

Yun-Feng Kao,Chrong Jung Lin,Ya-Chin King

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)（2019）

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摘要

Repeated and fast switching between on/off state without read window degradation is key for the development of resistive random access memory (RRAM) to meet reliable nonvolatile storage demands. In cycling study of the cell, we first established an incremental step pulse programing (ISPP) algorithm for 1T-1R backfilled contact resistive random access memory (BCRRAM) array. Experimental data reveals a strong correlation between reset time and the types of conductive filament (CF) formed. A training methodology is proposed to reduce the chance of the stochastic CF growth inside BCRRAM to maintain efficient reset operations and extend the endurance capability.

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关键词

stochastic filament formation,cycling endurance,backfilled contact resistive random access memory cells,read window degradation,reliable nonvolatile storage demands,conductive filament,stochastic CF growth,training methodology,BCRRAM array,1T-1R backfilled contact resistive random access memory array,ISPP algorithm,incremental step pulse programing algorithm,RRAM

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