Spin-Orbit Torque Driven One-Bit Magnetic Racetrack Devices - Memory and Neuromorphic Applications

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)(2019)

引用 3|浏览16
暂无评分
摘要
Recent breakthroughs on spin-orbit torque have opened door to more versatile magnetic racetrack memory. Especially, spin-orbit torque driven one-bit three terminal racetrack memory is promising to develop field-free memory and neuromorphic devices that have many figure of merits. However, there are quite a few challenges to overcome to have working racetrack devices such as decent tunneling magnetoresistance, low threshold current density, and homogeneous films. We present here successfully fabricated one-bit three terminal magnetic racetrack devices in which the position of domain wall is readout by magnetic tunnel junctions.
更多
查看译文
关键词
neuromorphic applications,versatile magnetic racetrack memory,one-bit magnetic racetrack devices,memory applications,decent tunneling magnetoresistance,low threshold current density,homogeneous films,domain wall,spin-orbit torque,magnetic tunnel junctions,one-bit three terminal magnetic racetrack devices,neuromorphic devices,field-free memory,one-bit three terminal racetrack memory
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要