Analysis Of Threshold Voltage In Gan Mosfets On Homoepitaxial P-Type Gan Layers
2019 COMPOUND SEMICONDUCTOR WEEK (CSW)（2019）
摘要
In this study, we investigate the sources of unintentional threshold voltage (V
TH
) lowering in GaN MOSFETs by analyzing a dependence of V
TH
on body voltage (V
B
). Through the V
TH
-V
B
characteristics of the MOSFETs, we concluded that the V
TH
lowering results from the relatively large amount of positive charge at the MOS interface rather than the donor in the p-type GaN layer.
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关键词
p-type GaN layer,GaN MOSFETs,homoepitaxial p-type GaN layers,unintentional threshold voltage,body voltage,positive charge,GaN
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