The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires

Technical Physics Letters(2019)

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摘要
We have studied the role of EL2 centers in formation of the photoelectric response of an array of radial n -type GaAs/Al x Ga 1 – x As ( x = 0.3) nanowires (NWs) grown by molecular beam epitaxy on a p -type silicon substrate. Results revealed a significant decrease in the time of NW photoresponse recovery as compared to that in a bulk crystal upon the transition of EL2 centers from a metastable nonactive state to the normal ground state.
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molecular beam epitaxy,semiconductors,nanowires,photoelectric properties,defects,gallium arsenide,silicon.
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