Negative terahertz conductivity at vertical carrier injection in a black-Arsenic-Phosphorus-Graphene heterostructure integrated with a light-emitting diode

Victor Ryzhii,Maxim Ryzhii,Taiichi Otsuji,Valeriy E. Karasik,Vladimir G. Leiman,Vladimir Mitin,Michael S. Shur

IEEE Journal of Selected Topics in Quantum Electronics（2019）

引用 4|浏览28

暂无评分

摘要

We propose and analyze the heterostructure comprising a black-arsenic-phosphorus layer (b-As1-xPxL) and a graphene layer (GL) integrated with a light-emitting diode (LED). The integrated b-As1-xPxL-GL-LED heterostructure can serve as an active part of the terahertz (THz) laser using the interband radiative transitions in the GL. The feasibility of the proposed concept is enabled by the combination...

查看译文

关键词

Absorption,Light emitting diodes,Charge carrier processes,Photonics,Optical pumping,Cooling,Semiconductor lasers

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要