Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistors
MICROELECTRONICS RELIABILITY(2019)
摘要
Electrostatic discharge behavior of integrated SiGe heterojunction bipolar transistors is investigated by transmission line pulse (TLP) and transient interferometric mapping techniques. When stressing collector - base junction in reverse direction, two distinct non-thermal failure modes, depending on TLP pulse rise time (RT), have been found: For RT >= 10 ns the observed failure at a critical voltage is attributed to base corner breakdown as supported by failure analysis. For RT <= 5 ns the failure occurs due to parasitic capacitance coupling which virtually short-circuits the base-emitter junction at the pulse beginning and thus induces a parasitic bipolar action.
更多查看译文
关键词
esd failure modes,sige heterojunction,tlp rise time,collector-base
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要