Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment

M. Borga,M. Meneghini, D. Benazzi, E. Canato, R. Püsche,J. Derluyn, I. Abid,F. Medjdoub,G. Meneghesso,E. Zanoni

Microelectronics Reliability（2019）

引用 16|浏览54

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摘要

The aim of this work is to investigate the breakdown mechanisms of the layers constituting the vertical buffer of GaN-on-Si HEMTs; in addition, for the first time we demonstrate that the breakdown field of the AlN nucleation layer grown on a silicon substrate is equal to 3.2 MV/cm and evaluate its temperature dependence.

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