Strain Property of Germanium Photonic Crystal Cavity on Silicon

international conference on group iv photonics(2019)

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摘要
Monolithic germanium on silicon 1 dimensional photonic crystal cavity is presented. Numerical simulation shows Q ∼ 100,000 for the cavity mode overlapped with strained germanium nanostructure. Raman measurement shows up to 1.5 % of uniaxial tensile strain at the center of the cavity.
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关键词
Germanium,Ge on Si,monolithic,germanium laser,strained germanium,optical interconnect,photonic crystal
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