TCAD Framework to Estimate the NBTI Degradation in FinFET and GAA NSFET Under Mechanical Strain
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)(2019)
摘要
A physics-based TCAD framework is used to estimate the interface trap generation (ΔN
IT
) during Negative Bias Temperature Instability (NBTI) stress in P-channel FinFET and Gate All Around (GAA) Nano-Sheet (NS) FET. The impact of mechanical strain due to channel length scaling (L
CH
) on ΔN
IT
generation is estimated. The band structure calculations are used to explain the impact of mechanical strain on ΔN
IT
generation.
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关键词
NBTI,RD model,GAA-NSFET,FinFETs,mechanical strain,LCH scaling
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