Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes
IEEE Transactions on Nuclear Science(2020)
摘要
The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion linear energy transfer (LET), and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 to 1700 V. Using a device with a higher breakdown voltage than required in ...
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关键词
Degradation,Schottky diodes,Silicon carbide,Leakage currents,Ions,Epitaxial growth,Radiation effects
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