Modeling of Temperature-Dependent MOSFET Aging

We have modeled MOSFET-device aging based on the trap-density increase, which is included in the Poisson equation to consider aging explicitly and physically correct. To preserve consistency, the Poisson equation is solved iteratively. Measured temperature dependence of aged I-V characteristics are well reproduced with implementation of this aging model into the industry-standard model HiSIM. The extracted physical device quantities with the developed model from measurements have been investigated to characterize the aging features. It is observed that the activation energy E _a as a function of V _gs is nearly identical for non-aged and aged devices. This concludes that the temperature dependence of aging originates mostly from the temperature-dependent electrostatic potential, resulting in negligible temperature dependency of extracted trap density N _trap . To generalize the conclusion, 2D-device simulation is investigated for a double-gate (DG) MOSFET with increased stress-induced trap density. The same results as obtained from measurements are achieved, namely the activation energy is nearly identical for either non-aged or aged cases. This concludes that the temperature dependence of device aging can be accurately predicted using the temperature-dependent I-V characteristics of non-aged device.