III-V on SOI Photonic Crystal Nano-Amplifier and Nanolaser
2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)（2019）
Abstract
As silicon photonics technology is advancing, there is still a critical need to generate optical signals on-chip, increase and preserve their power throughout the whole chip. Within this frame, the heterogeneously integrated III-V semiconductor structures on silicon seem to be the most promising solution, showing CMOS-compatibility, low power consumption and footprint. In this paper, we present our work in the development of electrically injected hybrid PhC nano-amplifier and nanolaser.
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Key words
SOI photonic crystal nanoamplifier,silicon photonics technology,heterogeneously integrated III-V semiconductor structures,CMOS-compatibility,low power consumption,electrically injected hybrid PhC nanoamplifier,nanolaser,Si
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