Profiling As plasma doped Si/SiO2 with molecular ions

H. Trombini,I. Alencar,G.G. Marmitt,R. Fadanelli,P.L. Grande,M. Vos,J.G. England

Thin Solid Films（2019）

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摘要

•Ion clusters at intermediate energies allow quantification of absolute layer thickness and density.•Wet clean processes following plasma implantation grow an underdense SiO2 overlayer.•Analysis of medium energy ion scattering spectra provide the arsenic dopant profile.

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关键词

Plasma doping,Medium energy ion scattering,Molecular ions,Coulomb explosion,Depth profiling

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