Effects of boron doping on solid phase crystallization of in situ doped amorphous Silicon thin films prepared by electron beam evaporation

Salar H. Sedani, Ozlen F. Yasar,Mehmet Karaman,Rasit Turan

Thin Solid Films（2020）

引用 5|浏览5

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摘要

•Homogeneous in situ boron doping by controlling the effusion cell temperature.•Stepwise increase in active boron atoms leads to increase in crystallization of non-hydrogenated a-Si.•No significant change in boron binding energies during the crystallization process.

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关键词

Non-hydrogenated amorphous silicon,Polysilicon,In-situ boron doping,Thin films,Solid-phase crystallization,Electron beam evaporation,Effusion cell,Raman spectroscopy,Time-of-flight secondary ion mass spectroscopy,X-ray photoelectron spectroscopy

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