Chemical Bonding States and Dopant Redistribution of Heavily Phosphorus-doped Epitaxial Silicon Films: Effects of Millisecond Laser Annealing and Doping Concentration
APPLIED SURFACE SCIENCE(2020)
摘要
We investigated the effect of millisecond (ms) laser annealing and doping concentration on the chemical bonding states and dopant behaviors of P-doped epitaxial Si (Si:P) layers grown on Si (1 0 0) substrates using high-resolution X-ray photoelectron spectroscopy (HR-XPS), secondary-ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES) measurements. Our XPS results showed that the intensities of P 2p peaks for Si:P films were increased with P concentration and subsequent laser annealing. From the SIMS and AES measurement results, we found that P atoms were slightly accumulated at the near-surface region of the Si:P film by the laser annealing, while macroscopic P concentration being maintained in the whole Si:P films without significant diffusion of P atoms toward the Si (1 0 0) substrate. In addition, we performed ex-situ HF cleaning on the as-grown and laser-annealed Si:P films in order to precisely measure the change in chemical states and dopant distribution at the near-surface region. The intensities of the P 2p peak in the as-grown Si:P films were increased after the HF cleaning due to the removal of native oxide layers from the Si:P films. In contrast, the decrease in P 2p peak intensities was observed in the laser-annealed Si:P films after the HF cleaning, indicating the dopant loss from the near-surface region with native oxide removal.
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关键词
Chemical bonding states,X-ray photoelectron spectroscopy,Millisecond laser annealing,P-doped Si films
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