E-Band Stacked InP DHBT Power Amplifier with Broadband Impedance Transforming Combiner

2019 European Microwave Conference in Central Europe (EuMCE)(2019)

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摘要
This paper reports on an E-band stacked power amplifier implemented in a power optimized InP DHBT microwave monolithic integrated circuit (MMIC) technology. A broadband impedance transforming four-way combiner is proposed to allow simultaneous operation over the E-band frequency ranges of 71-76 GHz and 81-86 GHz. The power amplifier exhibits a maximum saturated output power of 22 dBm at 74 GHz with a linear power gain of 16.6 dB. The output power remains larger than 20 dBm from 71-76 GHz and larger than 19 dBm from 81-86 GHz.
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关键词
power amplifiers,indium phosphide,double heterojunction bipolar transistor (DHBT),stacking.
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