Lateral β-Ga 2 O 3 field effect transistors
Semiconductor Science and Technology(2020)
摘要
Beta phase Gallium Oxide (BGO) is an emerging ultra-wide bandgap semiconductor with disruptive potential for ultra-low power loss, high-efficiency power applications. The critical field strength is the key enabling material parameter of BGO which allows sub-micrometer lateral transistor geometry. This property combined with ion-implantation technology and large area native substrates result in exceptionally low conduction losses, faster power switching frequency and even radio frequency power. We present a review of BGO epitaxial materials and lateral field-effect transistors developments, highlight early achievements and discuss engineering solutions with power switching and radio frequency applications in mind.
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