Self-Heating Characterization of $\beta$ -Ga 2 O 3 Thin-Channel MOSFETs by Pulsed ${I}$ – ${V}$ and Raman Nanothermography

$\beta $ -Ga ₂ O ₃ thin-channel MOSFETs were evaluated using both dc and pulsed ${I}$ – ${V}$ measurements. The reported pulsed ${I}$ – ${V}$ technique was used to study self-heating effects in the MOSFET channel. The device was analyzed over a large temperature range of 23 °C–200 °C. A relationship between dissipated power and channel temperature was established, and it was found that the MOSFET channel was heating up to 208 °C when dissipating 2.5 W/mm of power. The thermal resistance of the channel was found to be 73 °C-mm/W. The results are supported with the experimental Raman nanothermography and thermal simulations and are in reasonable agreement with pulsed ${I}$ – ${V}$ findings. The high thermal resistance underpins the importance of optimizing thermal management in future Ga ₂ O ₃ devices.