Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

Masahiro Takahashi
Masahiro Takahashi
Atsushi Tanaka
Atsushi Tanaka
Hirotaka Watanabe
Hirotaka Watanabe
Maki Kushimoto
Maki Kushimoto
Kevin J. Chen
Kevin J. Chen

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2020.

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Abstract:

Herein, gallium nitride (GaN) samples implanted with magnesium (Mg) and fluorine (F) ions are investigated by photoluminescence (PL) measurements. In low-temperature PL measurements, the characteristic green luminescence (GL) band attributable to nitrogen vacancies (V-N) is observed in Mg-ion-implanted GaN. As V-N are likely to act as don...More

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