Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2020.
Abstract:
Herein, gallium nitride (GaN) samples implanted with magnesium (Mg) and fluorine (F) ions are investigated by photoluminescence (PL) measurements. In low-temperature PL measurements, the characteristic green luminescence (GL) band attributable to nitrogen vacancies (V-N) is observed in Mg-ion-implanted GaN. As V-N are likely to act as don...More
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