A Closed-Form Transient Joule Heating Model for an Interconnect in an Integrated Circuit
IEEE Electron Device Letters(2020)
摘要
Front and back ends of line (FEOL and BEOL) self-heating and mutual heating are important barriers to a sustained increase in processor speed and density. In this context, the severity of transient Joule heating in scaled interconnects under a variety of operating conditions (e.g., frequency and duty cycle) is not fully understood. Here we introduce the closed-form analytical
transient
Joule heating model to calculate the time-dependent temperature rise of an interconnect (
$\Delta {T}_{\textsf {Int}}({t})$
) located at an arbitrary metal level within an integrated circuit (IC). The model is validated by high-fidelity finite element method simulations and specially designed test structures. Remarkably, the model predicts
${I}_{\textsf {Max}}$
(the interconnect-specific current for a certain degree of
$\Delta {T}_{\textsf {Int}}$
) within 20%–25% for an arbitrary duty cycle. Therefore, our model can be used to accurately predict temperature-accelerated interconnect reliability issues of a modern IC.
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关键词
Analytical compact model,Joule-heating,interconnect,FEM analysis,temperature coefficient of resistance (TCR) measurement
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