Mos2 transistor gated by PMMA-based electrolyte for sub-1 V operation.

The fabrication of high-performance MoS 2 transistor with a reliable gate dielectric layer remains an obstacle due to the lack of dangling bonds for dielectric deposition. Here, we demonstrate the employment of PMMA-based electrolyte film as the gate dielectric for Mos2 transistors. The electrolyte can be utilized to form high quality and uniform thin film by spin-coating method at room temperature. Based on this PMMA-based electrolyte film, top-gated Mos2 field effect transistors (FETs) are fabricated and exhibit exceptional device performance. The ultra-high capacitance of the electrolyte, resulting from the formation of an electric double layer (EDL), yields a current on/off ratio about 105 and a steep subthreshold swing (90 mV/dec) within a low supply voltage (1 V). Furthermore, we investigate the dynamic response of a Mos2 inverter with a switching speed over 100 Hz. This result provides the possibility for realizing low power logic circuit and nano-electronics.