Improved Interfacial and Electrical Properties of MoS 2 Transistor With High/Low-Temperature Grown Hf 0.5 Al 0.5 O as Top-Gate Dielectric
IEEE Electron Device Letters(2020)
摘要
Uniform Hf
0.5
Al
0.5
O top-gate (TG) dielectric can be grown directly on the MoS
2
surface using a high/low-temperature deposition method, and excellent performances for few-layer (FL) MoS
2
transistors with Hf
0.5
Al
0.5
O as TG dielectric can be achieved: high mobility of 90 cm
2
/Vs, small sub-threshold swing of 77 mV/dec and low interface-state density of
$1.08\times {10}^{{12}}$
eV
−1
cm
−2
. The involved mechanisms lie in the facts that
(1)
the TG dielectric can prevent the MoS
2
surface from absorbing the oxygen and moisture in the air;
(2)
growing the Hf
0.5
Al
0.5
O dielectric at low temperature can well provide nucleation sites for its subsequent high-temperature growth; and (3) doping Al into HfO
2
can reduce the trap charges in the resulting HfAlO dielectric to weaken the Coulomb scattering and also produce densified and uniform dielectric film. Therefore, the Hf
0.5
Al
0.5
O TG-dielectric structure and its growth method described in this work have a high potential to fabricate high-performance FL MoS
2
field-effect transistors for practical electron device applications.
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关键词
MoS₂ transistors,Hf₀.₅Al₀.₅O,top-gate dielectric,mobility,interface-state density
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