Charge Transport in Vertical GaN Schottky Barrier Diodes: A Refined Physical Model for Conductive Dislocations
IEEE Transactions on Electron Devices(2020)
摘要
Charge transport mechanisms of forward and reverse leakage currents in vertical GaN Schottky barrier diodes are investigated by measuring the temperature-dependent current-voltage characteristics. The results show that the leakage current is primarily governed by dislocation-associated thermionic field emission (TFE). The primary transport path is the reduced, localized conduction band around the dislocation core rather than the continuum defect states. A refined phenomenological physical model is developed for conductive dislocations in GaN, emphasizing that: 1) surface donors, surrounding the core of dislocations, can significantly shrink the barrier region after ionization, causing severe TFE leakage; 2) the donors likely to be responsible for TFE have a typical density of cm at 300 K and activation energy of 78 meV; and 3) the barrier height at donor sites is similar to 0.65 eV at 300 K, which is reduced by similar to 0.4 eV with respect to the dislocation-free region.
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关键词
Gallium nitride,Temperature measurement,Tunneling,Schottky diodes,Schottky barriers,Current measurement,Substrates
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