Electrical Compact Modeling of SiGe Phototransistor: Impact of the Distributed Nature on Dynamic Behavior

IEEE Transactions on Electron Devices(2020)

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摘要
This article presents and analyzes an improved electrical compact model of SiGe/Si-double heterojunction bipolar phototransistors (HPT). This is a complete one, operating in dc, in nonlinear large-signal ac mode and in optomicrowave operating. This HPT was fabricated based on an existing industrial SiGe heterojunction bipolar transistor (HBT) Telefunken GmbH technology. Several deviations from the...
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关键词
Silicon germanium,Optical device fabrication,Junctions,Capacitance,Phototransistors,Nonlinear optics,Stimulated emission
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